Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures
Author:
Affiliation:
1. Department of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil
2. CEA-Leti, Université Grenoble Alpes, MINATEC Campus, Grenoble, France
Funder
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Fundação de Amparo à Pesquisa do Estado de São Paulo
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/6245494/10416702/10549873.pdf?arnumber=10549873
Reference33 articles.
1. Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff.
2. Self-heating in advanced CMOS technologies
3. The Changing Automotive Environment: High-Temperature Electronics
4. Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures
5. Nanowire Transistors
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