Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs-Reference-Cited by-同舟云学术

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Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs

Published:2002 Issue:2 Volume:49 Page:287-294
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lixin Ge ,Fossum J.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21131/00981219.pdf?arnumber=981219

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