Radio Frequency Characteristics of InGaAs FE-FETs With Scaled Channel Length-Reference-Cited by-同舟云学术

Radio Frequency Characteristics of InGaAs FE-FETs With Scaled Channel Length

Published:2023-02 Issue:2 Volume:70 Page:443-448
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang P.¹^ORCID,Chen M. Y.²^ORCID,Luc Q. H.³^ORCID,Wu J. Y.¹,Tran N. A.³,Chang E. Y.⁴^ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Department of Materials Science and Engineering, the Department of Electronics Engineering, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/09994659.pdf?arnumber=9994659

Reference43 articles.

1. A review of recent MOSFET threshold voltage extraction methods

2. Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

3. Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

4. Ferroelectricity in yttrium-doped hafnium oxide

5. Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inversion-Mode In_0.53Ga_0.47 As MOSFET with f _T = 275 GHz and high V _eff;Applied Physics Express;2023-04-01