Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft-Reference-Cited by-同舟云学术

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Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Li Kai-Shin,Wei Yun-Jie,Chen Yi-Ju,Chiu Wen-Cheng,Chen Hsiu-Chih,Lee Min-Hung,Chiu Yu-Fan,Hsueh Fu-Kuo,Wu Bo-Wei,Chen Pin-Guang,Lai Tung-Yan,Chen Chun-Chi,Shieh Jia-Min,Yeh Wen-Kuan,Salahuddin Sayeef,Hu Chenming

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614521.pdf?arnumber=8614521

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2;Rare Metals;2024-04-25

2. RF/Analog Performance Optimization and Assessing Linearity/Distortion FoMs of HDDP-DG-NCFET for Terahertz Applications;Arabian Journal for Science and Engineering;2024-02-01

3. FEOL Monolithic Co-Integration of FeFET and CMOS on 8-Inch Wafer Using Laser Spike Annealing With Implementation of an FeFET Inverter;IEEE Access;2024

4. Design considerations for engineering $$\hbox {HfS}_2$$ negative capacitance FET through multilayered channel and $$\hbox {Hf}_{1-x}{\hbox {Zr}_{x}}\hbox {O}_2$$/$$\hbox {HfO}_2$$ double-gate stacks: an ab initio and NEGF study;Journal of Computational Electronics;2023-05-14

5. Radio Frequency Characteristics of InGaAs FE-FETs With Scaled Channel Length;IEEE Transactions on Electron Devices;2023-02

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