Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS-Reference-Cited by-同舟云学术

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Michl J.¹,Grill A.²,Stampfer B.³,Waldhoer D.³,Schleich C.³,Knobloch T.¹,Ioannidis E.⁴,Enichlmair H.⁴,Minixhofer R.⁴,Kaczer B.³,Parvais B.²,Govoreanu B.³,Radu I.³,Grasser T.¹,Waltl M.³

Affiliation:

1. Institute for Microelectronics,TU Wien,Vienna,Austria,1040

2. imec,Leuven,Belgium,3001

3. CDL for Single-Defect Spectroscopy at the

4. ams-OSRAM AG,Premstätten,Austria,8141

Funder

Austrian Research Promotion Agency FFG (Take off Programm)

Christian Doppler Research Association

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720501.pdf?arnumber=9720501

Reference43 articles.

1. Tunneling ionization of deep centers in high-frequency electric fields

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transistor Matrix Array for Measuring Variability and Random Telegraph Noise at Cryogenic Temperatures;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15

2. New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications;IEEE Electron Device Letters;2024-04

4. An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications;IEEE Journal of the Electron Devices Society;2024

5. Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS;IEEE Journal of the Electron Devices Society;2024