The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications-Reference-Cited by-同舟云学术

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The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications

Published:2024-04 Issue:4 Volume:45 Page:530-533
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sun Yichao¹^ORCID,Lu Peng¹,Ma Yue¹,Zhang Chenrui¹,Han Zhengsheng¹^ORCID,Li Bo¹^ORCID

Affiliation:

1. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China

Funder

Youth Innovation Promotion Association Chinese Academy of Sciences

National Key Research and Development Program

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10423014.pdf?arnumber=10423014

Reference23 articles.

1. 1.4 Quantum computing - the next challenge in circuit and system design

2. Cryo-CMOS for quantum computing

3. Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

4. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

5. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

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