Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS
Author:
Affiliation:
1. Department of Quantum and Computer Engineering, Delft University of Technology, Delft, The Gravendeel
2. Qutech, Delft, The Netherlands
Funder
Intel Corporation
NXP Semiconductors
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/6245494/10416702/10606256.pdf?arnumber=10606256
Reference34 articles.
1. Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent
2. Assessment of electronics for cryogenic space exploration missions
3. Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs
4. Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS
5. Variable-Temperature Broadband Noise Characterization of MOSFETs for Cryogenic Electronics: From Room Temperature down to 3 K
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