An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications-Reference-Cited by-同舟云学术

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An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications

Published:2024 Issue: Volume:12 Page:345-349
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Sun Ying¹^ORCID,Gu Yuchen¹,Wan Jing²^ORCID,Yu Xiao³^ORCID,Chen Bing⁴^ORCID,Gao Dawei¹^ORCID,Cheng Ran¹^ORCID,Han Genquan⁴^ORCID

Affiliation:

1. College of Integrated Circuits, Zhejiang University, Hangzhou, China

2. School of Information Science and Technology, Fudan University, Shanghai, China

3. Research Center for Intelligent Chips, Zhejiang Lab, Hangzhou, China

4. Hangzhou Institute of Technology, Xidian University, Hangzhou, China

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Kun-Peng Program of Zhejiang Province

Zhejiang Provincial Key Research and Development Program

support from the Technology Innovation and Training Center, Polytechnic Institute, Zhejiang University, Hangzhou, Zhejiang, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6245494/10416702/10499957.pdf?arnumber=10499957

Reference33 articles.

1. Cryo-CMOS for quantum computing

2. Cold CMOS as a Power-Performance-Reliability Booster for Advanced FinFETs

3. Cryogenic Characteristics of Multinanoscales Field-Effect Transistors

4. Cryo-CMOS Compact Modeling

5. Operation of Analog MOS Circuits in the Weak or Moderate Inversion Region

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