Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks-Reference-Cited by-同舟云学术

Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Franco J.¹,Arimura H.¹,de Marneffe J.-F.¹,Wu Z.¹,Vandooren A.¹,Ragnarsson L.-A¹,Litta E. Dentoni¹,Horiguchi N.¹,Croes K.¹,Linten D.¹,Afanas'ev V.²,Grasser T.³,Kaczer B.¹

Affiliation:

1. imec,Leuven,Belgium

2. KU,Leuven,Belgium

3. TU,Wien,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720657.pdf?arnumber=9720657

Reference17 articles.

1. Interaction of Pb defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation

2. Thermal Stability of Hydroxyl Groups on a Well-Defined Silica Surface

3. Suppression of Leakage Current of Deposited SiO2 with Bandgap Increasing by High Temperature Annealing

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of Threshold Voltage Variation by H₂ Plasma Improved KrF Photoresist Profile;IEEE Transactions on Electron Devices;2024-09

2. Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors;Rare Metals;2024-07-09

3. Impact of work function metal stacks on the performance and reliability of multi-V RMG CMOS technology;Solid-State Electronics;2024-06

4. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

5. SILC and TDDB reliability of novel low thermal budget RMG gate stacks;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14