SILC and TDDB reliability of novel low thermal budget RMG gate stacks
Author:
Affiliation:
1. KU Leuven,Leuven,Belgium,3001
2. imec,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529347.pdf?arnumber=10529347
Reference22 articles.
1. NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology
2. Advances, challenges and opportunities in 3D CMOS sequential integration
3. Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration
4. A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration
5. Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks
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