A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration-Reference-Cited by-同舟云学术

A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration

Published:2021-07 Issue:7 Volume:68 Page:3142-3148
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fenouillet-Beranger C.^ORCID,Brunet L.,Batude P.,Brevard L.,Garros X.^ORCID,Casse M.^ORCID,Lacord J.^ORCID,Sklenard B.,Acosta-Alba P.^ORCID,Kerdiles S.^ORCID,Tavernier A.,Vizioz C.,Besson P.,Gassilloud R.,Pedini J.-M.,Kanyandekwe J.,Mazen F.,Magalhaes-Lucas A.,Cavalcante C.,Bosch D.,Ribotta M.,Lapras V.,Vinet M.,Andrieu F.,Arcamone J.^ORCID

Funder

French Public Authorities through the NANO2022 Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9462946/09463062.pdf?arnumber=9463062

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