Suppression of Threshold Voltage Variation by H₂ Plasma Improved KrF Photoresist Profile
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/16/10645717/10638483.pdf?arnumber=10638483
Reference23 articles.
1. Studies of Photo Resist Profile Improvement in 28 nm Implanting Layer’s Lithography Process without BARC
2. KrF Photoresist Profile Modulation by NH3 Plasma Treatment for 28 nm SRAM
3. Substrate effect on CD Control for Ion Implantation Layer Lithography Beyond 45 nm Node
4. Wafer sub-layer impact in OPC/ORC models for advanced node implant layers
5. The impact of intrinsic device fluctuations on CMOS SRAM cell stability
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