Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions-Reference-Cited by-同舟云学术

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Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Sunbul Ayse¹,Ali Tarek¹,Hoffmann Raik¹,Revello Ricardo¹,Raffel Yannick¹,Duhan Pardeep²,Lehninger David¹,Kuhnel Kati¹,Rudolph Matthias¹,Oehler Sebastian¹,Schramm Philipp¹,Czernohorsky Malte¹,Seidel Konrad¹,Kampfe Thomas¹,Eng Lukas M.³

Affiliation:

1. Fraunhofer Institute for Photonic Microsystems IPMS,Center Nanoelectronic Technologies (CNT),Dresden,Germany,01099

2. Indian Institute of Technology (IIT) Ropar,Department of Electrical Engineering,Rupnagar,Punjab,India,140001

3. Technische Universität Dresden,Institut für Angewandte Physik,Dresden,Germany,01187

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764585.pdf?arnumber=9764585

Reference16 articles.

1. Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

2. Hafnium zirconate gate dielectric for advanced gate stack applications;hegde;Journal of Applied Physics,2007

3. Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

4. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

5. Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications;sunbul;IEEE Transactions on Electron Devices,2021

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