Hafnium zirconate gate dielectric for advanced gate stack applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2716399
Reference34 articles.
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3. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
4. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics
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