Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition-Reference-Cited by-同舟云学术

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Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

Published:2005-09 Issue:5 Volume:98 Page:054104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Triyoso D. H.,Hegde R. I.,Zollner S.,Ramon M. E.,Kalpat S.,Gregory R.,Wang X.-D.,Jiang J.,Raymond M.,Rai R.,Werho D.,Roan D.,White B. E.,Tobin P. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2030407

Reference16 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD

3. A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics

4. ECS Proceedings;Chen F.,2004

5. Different current conduction mechanisms through thin high-kHfxTiySizO films due to the varying Hf to Ti ratio

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4. Inherently Selective Water-Free Deposition of Titanium Dioxide on the Nanoscale: Implications for Nanoscale Patterning;ACS Applied Nano Materials;2022-01-19

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