A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics-Reference-Cited by-同舟云学术

A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics

Published:2004-04 Issue:1-4 Volume:72 Page:263-266
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chen F.,Bin X.,Hella C.,Shi X.,Gladfelter W.L.,Campbell S.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Phase Relations and Thermal Expansion in the System HfO2-TiO2

2. J.R. Hauser, K. Ahmed, in: Seiler, Diebold, Bullis, Shaffner, McDonald, Walters (Eds.), Characterization and Metrology for ULSI Technology: 1998 International Conference, The Amer. Inst. of Physics, New York, NY, 1998, p. 235

3. Titanium dioxide (TiO2)-based gate insulators

4. J.R. Hauser, K. Ahmed, in: Characterization and Metrology for ULSI Technology: 1998 International Conference, p. 235

5. Investigation of the MOST channel conductance in weak inversion

Cited by 77 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick;Nature Communications;2024-06-25

2. Investigation of spacer-engineered stacked nanosheet tunnel FET with varying design attributes;Physica Scripta;2024-03-15

3. Doping-less MultiGate Inverted-T shape FET device with Schottky source/drain contacts;Microelectronics Journal;2024-01

4. Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits;Micromachines;2023-09-27

5. Gate All Around MOSFETs‐A Futuristic Approach;Machine Learning for VLSI Chip Design;2023-06-23