Single-Event Latchup Vulnerability at the 7-nm FinFET Node
Author:
Affiliation:
1. Vanderbilt University,Department of ECE,Nashville,TN,37212
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764419.pdf?arnumber=9764419
Reference21 articles.
1. Neutron Induced Micro SEL Events in COTS SRAM Devices
2. High-Current State triggered by Operating-Frequency Change
3. Micro Latch-Up Analysis on Ultra-Nanometer VLSI Technologies: A New Monte Carlo Approach
4. Confidence limits for small numbers of events in astrophysical data
5. Voltage Dependency of Propagating Single-Event Transient Pulsewidths in 90-nm CMOS Technology
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data;IEEE Transactions on Nuclear Science;2024-08
2. A Single-Event Latchup setup for high-precision AMS circuits;2023 IEEE European Test Symposium (ETS);2023-05-22
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