Multi-state resistance switching and variability analysis of HfO<inf>x</inf> based RRAM for ultra-high density memory applications-Reference-Cited by-同舟云学术

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Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 International Symposium on Next-Generation Electronics (ISNE)
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Author:

Prakash Amit,Park J-S.,Song J.,Lim S-J.,Park J-H.,Woo J.,Cha E.,Hwang Hyunsang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7124302/7131937/07132027.pdf?arnumber=7132027

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing;Nanomaterials;2023-06-13

2. Static Analysis of Current Limiting Techniques for Accurate Memristor Programming;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

3. Ternary Neural Networks Based on on/off Memristors: Set-Up and Training;Electronics;2022-05-10

4. A Time-based Sensing Scheme for Multi-level Cell (MLC) Resistive RAM;2019 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC);2019-10

5. An RRAM-based MLC design approach;Microelectronics Journal;2017-06

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