Static Analysis of Current Limiting Techniques for Accurate Memristor Programming
Author:
Affiliation:
1. University of Siena,Department of Information Engineering and Mathematics,Siena,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10181241/10181318/10181841.pdf?arnumber=10181841
Reference23 articles.
1. Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications
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3. Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
4. Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications
5. Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An Advanced Customizable Circuit Simulator to Investigate Memristor Dynamics;Lecture Notes in Electrical Engineering;2024
2. Static Analysis of Current Limited Memristors: A Novel Approach to Investigate Memristor Programming Techniques;Lecture Notes in Electrical Engineering;2023-11-29
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