Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding-Reference-Cited by-同舟云学术

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Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding

Published:2021-06 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 71st Electronic Components and Technology Conference (ECTC)
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Author:

Iacovo Serena,Peng Lan,Nagano Fuya,Uhrmann Thomas,Burggraf Jurgen,Fehkuhrer Andreas,Conard Thierry,Inoue Fumihiro,Kim Soon-Wook,De Vos Joeri,Phommahaxay Alain,Beyne Eric

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9501397/9501403/09501758.pdf?arnumber=9501758

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Water stress corrosion at wafer bonding interface during bond strength evaluation;Materials Science in Semiconductor Processing;2024-12

2. Chemical mechanical planarization of nanotwinned copper/polyimide for low temperature hybrid bonding;Journal of Electroanalytical Chemistry;2024-09

3. Water Stress Corrosion at Wafer Bonding Interface During Bond Strength Evaluation;2024

4. Reliability Challenges in Advanced 3D Technologies: The Case of Through Silicon Vias and SiCN–SiCN Wafer-to-Wafer Hybrid-Bonding Technologies;IEEE Transactions on Device and Materials Reliability;2023-12

5. ESD process assessment of 2.5D and 3D bonding technologies;2023 45th Annual EOS/ESD Symposium (EOS/ESD);2023-10-02

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