Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness
Author:
Affiliation:
1. Rochester Institute of Technology,USA
2. University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118286.pdf?arnumber=10118286
Reference7 articles.
1. Temperature Dependence and Temperature-Aware Sensing in Ferroelectric FET
2. Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a- IGZO TFT by TCAD Simulation
3. On the Channel Percolation in Ferroelectric FET Towards Proper Analog States Engineering
4. Double-Gate W-Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations;Journal of Materials Chemistry C;2024
2. Comprehensive Modeling of Switching Behavior in BEOL FeFET for Monolithic 3-D Integration;IEEE Transactions on Electron Devices;2024-01
3. BEOL FeFET SPICE-Compatible Model for Benchmarking 3-D Monolithic In-Memory TCAM Computation;IEEE Transactions on Electron Devices;2023-12
4. Frontiers in AI Acceleration: From Approximate Computing to FeFET Monolithic 3D Integration;2023 IFIP/IEEE 31st International Conference on Very Large Scale Integration (VLSI-SoC);2023-10-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3