Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations-Reference-Cited by-同舟云学术

Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Joh Hongrae¹,Lee Sangho¹,Ahn Jinho²,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea

2. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seonhdong-gu, Seoul, 04763, Republic of Korea

Abstract

Oxide channel dual-port FeNAND devices with low-temperature processing offer improved thermal stability, broader memory window, and enhanced reliability.

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC02210F

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