On the Channel Percolation in Ferroelectric FET Towards Proper Analog States Engineering
Author:
Affiliation:
1. Rochester Institute of Technology,USA
2. University of Stuttgart,Germany
3. Karlsruhe Institute of Technology,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720631.pdf?arnumber=9720631
Reference7 articles.
1. A Comprehensive Model for Ferroelectric FET Capturing the Key Behaviors: Scalability, Variation, Stochasticity, and Accumulation
2. Ferroelectric FET analog synapse for acceleration of deep neural network training
3. Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics
4. Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution
5. High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
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