Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes-Reference-Cited by-同舟云学术

Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes

Published:2023-04 Issue:2 Volume:59 Page:1-9
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Xue Haotian¹^ORCID,Muyeed Syed Ahmed Al²^ORCID,Palmese Elia¹^ORCID,Rogers Daniel¹^ORCID,Song Renbo³,Tansu Nelson⁴,Wierer Jonathan J.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA

2. Google, Inc.,, Fremont, CA, USA

3. Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, USA

4. School of Electrical and Mechanical Engineering (EME), Institute for Photonics and Advanced Sensing (IPAS), The University of Adelaide, Adelaide, SA, Australia

Funder

U.S. National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielam/3/10036346/10049437-aam.pdf

Reference52 articles.

1. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

2. Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”

3. Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

4. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

5. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

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