Author:
Rogers Daniel,Xue Haotian,Kish Fred,Pezeshki Bardia,Tselikov Alex,Wierer Jonathan J.
Abstract
InGaN/GaN micro-light-emitting diodes with high bandwidths (2.6 GHz) at high temperatures (250C) are demonstrated. Recombination rate analysis is performed to understand the effects of radiative and non-radiative rates on modulation response at varying temperatures.