Models of Bifurcation in a Semiconductor Wafer: A Comparison of the Analytical Solution vs. the ANSYS Finite Element Analysis-Reference-Cited by-同舟云学术

Models of Bifurcation in a Semiconductor Wafer: A Comparison of the Analytical Solution vs. the ANSYS Finite Element Analysis

Published:2022-04-25 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
language:
Short-container-title:

Author:

Vinciguerra Vincenzo¹,Malgioglio Giuseppe Luigi¹,Landi Antonio¹

Affiliation:

1. STMicroelectronics,ADG R&D,Catania,Italy,95121

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9758836/9758837/09758852.pdf?arnumber=9758852

Reference17 articles.

1. Simulating the warping of thin coated Si wafers using Ansys layered shell elements

2. Modelling the Elastic Energy of a Bifurcated Wafer: a Benchmark of the Analytical Solution vs. The ANSYS Finite Element Analysis

3. The tension of metallic films deposited by electrolysis;stoney;Proceedings of the Royal Society of London Series A Containing Papers of a Mathematical and Physical Character,1909

4. Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Finite Element Analysis of the Upsurge of Bifurcation during the Thinning Process of Large Semiconductor Wafers;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

2. A Comparison of Analytical and Finite Element Analysis Methods for Determining the Equivalent Thickness of Large 4H-SiC Taiko Wafers;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

3. Extension of the Equivalent Thickness Concept to the Bifurcation of Large Semiconductor Front Side Metal Taiko Wafer investigated by ANSYS Finite Element Analysis Methods;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

4. Guidelines for Area Ratio between Metal Lines and Vias to Improve the Reliability of Interconnect Systems in High-Density Electronic Devices;Electronics;2023-10-25

5. Determination of the Equivalent Thickness of a Taiko Wafer Using ANSYS Finite Element Analysis;Applied Sciences;2023-07-24