Modelling the Elastic Energy of a Bifurcated Wafer: a Benchmark of the Analytical Solution vs. The ANSYS Finite Element Analysis

Author:

Vinciguerra Vincenzo,Malgioglio Giuseppe Luigi,Landi Antonio

Publisher

Elsevier BV

Subject

Civil and Structural Engineering,Ceramics and Composites

Reference40 articles.

1. Experimental and theoretical investigation of bifurcated wafer warpage evolution in the wafer level packaging processes;Zhu;J Mater Sci: Mater Electron,2020

2. On the Way to understand the Warpage in 8’ Taiko Semiconductor Wafers for Power Electronics Applications (Si and SiC);Vinciguerra,2021

3. Accurate determination of bifurcation points for ground silicon wafers considering anisotropy using FEM method;Liu;Mater Res Express,2019

4. Analysis of asymmetric warpage of thin wafers on flat plate considering bifurcation and gravitational force;Shin;IEEE Trans Compon Packag Manuf Technol,2014

5. Sitta A, Landi A, Cafra B, Renna M, Calabretta M. Analysis of warpage behavior of electrochemical deposited thick copper on silicon, in “ PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020., 2020.

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2. A Comparison of Analytical and Finite Element Analysis Methods for Determining the Equivalent Thickness of Large 4H-SiC Taiko Wafers;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

3. Extension of the Equivalent Thickness Concept to the Bifurcation of Large Semiconductor Front Side Metal Taiko Wafer investigated by ANSYS Finite Element Analysis Methods;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

4. Stress mechanism analysis by finite element method for different dielectric films deposited with ion-beam assisted deposition on flexible substrates;Thin Solid Films;2024-03

5. Determination of the Equivalent Thickness of a Taiko Wafer Using ANSYS Finite Element Analysis;Applied Sciences;2023-07-24

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