A Comparison of Analytical and Finite Element Analysis Methods for Determining the Equivalent Thickness of Large 4H-SiC Taiko Wafers-Reference-Cited by-同舟云学术

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A Comparison of Analytical and Finite Element Analysis Methods for Determining the Equivalent Thickness of Large 4H-SiC Taiko Wafers

Published:2024-04-07 Issue: Volume:14 Page:1-4
ISSN:
Container-title:2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
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Author:

Vinciguerra Vincenzo¹,Malgioglio Giuseppe Luigi¹,Renna Marco¹

Affiliation:

1. Quality, Manufacturing and Technology (QMT),Power & Discrete Technologies R&D Department Stradale Primosole 50,Catania,Italy,95121

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491281/10491408/10491555.pdf?arnumber=10491555

Reference14 articles.

1. On the Way to understand the Warpage in 8” Taiko Semiconductor Wafers for Power Electronics Applications (Si and SiC)

2. Determination of the Equivalent Thickness of a Taiko Wafer Using ANSYS Finite Element Analysis

3. Modelling the Elastic Energy of a Bifurcated Wafer: a Benchmark of the Analytical Solution vs. The ANSYS Finite Element Analysis

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