Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET
Author:
Affiliation:
1. PDPM-IIITDM,Jabalpur,India
2. IIT,Roorkee,India
3. Korea Military Academy,Seoul,Korea
4. IIT,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117918.pdf?arnumber=10117918
Reference19 articles.
1. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
2. Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
3. Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology
4. Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation
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1. Self-Heating and Process-Induced Threshold Voltage Aware Reliability and Aging Analysis of Forksheet FET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. Electrothermal Modeling of Multi-Nanosheet FETs With Various Layouts;IEEE Transactions on Electron Devices;2024-04
3. Unveiling the Role of Interface and Dielectric Wall Traps with Self-heating Induced Aging Prediction of Forksheet FET;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
4. Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering;IEEE Access;2024
5. Design of Low-Power Operation with Sub 7-nm Semiconductor Technology Node;Handbook of Emerging Materials for Semiconductor Industry;2024
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