BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions-Reference-Cited by-同舟云学术

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

Published:2022 Issue: Volume:10 Page:907-912
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Alcala R.¹^ORCID,Materano M.¹^ORCID,Lomenzo P. D.¹^ORCID,Grenouillet L.²^ORCID,Francois T.²,Coignus J.²^ORCID,Vaxelaire N.²,Carabasse C.²,Chevalliez S.²,Andrieu F.²,Mikolajick T.¹^ORCID,Schroeder U.¹^ORCID

Affiliation:

1. NaMLab gGmbH, Dresden, Germany

2. CEA, LETI, Université Grenoble-Alpes, Grenoble, France

Funder

European Union’s Horizon 2020 Research and Innovation Program

Deutsche Forschungsgemeinschaft through Project Zeppelin

Project Homer

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09854909.pdf?arnumber=9854909

Reference16 articles.

1. Materials and production characterization requirements for the production of FRAM® memory products

2. Investigation of the endurance of FE-HfO2 devices by means of TDDB studies;florent;Proc IEEE IRPS,2018

3. Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

4. Reliability Properties of Low-Voltage Ferroelectric Capacitors and Memory Arrays

5. Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

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