Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices-Reference-Cited by-同舟云学术

Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Published:2021-02 Issue: Volume:204 Page:116515
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Chouprik Anastasia,Kondratyuk Ekaterina^ORCID,Mikheev Vitalii,Matveyev Yury^ORCID,Spiridonov Maxim^ORCID,Chernikova Anna^ORCID,Kozodaev Maxim G.,Markeev Andrey M.,Zenkevich Andrei^ORCID,Negrov Dmitrii

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Ferroelectricity in hafnium oxide thin films;Böscke;Appl. Phys. Lett.,2011

2. Internal Bias In Ferroelectric Ceramics: Origin And Time Dependence;Arlt;Ferroelectrics,1988

3. Mechanisms of aging and fatigue in ferroelectrics;Genenko;Materials Science and Engineering B,2015

4. Ferroelectric Hafnium Oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories;Müller,2013

5. Ferroelectric Properties of Lightly Doped La:HfO2 Thin Films Grown by Plasma Assisted Atomic Layer Deposition;Kozodaev;Appl. Phys. Lett.,2017

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations;IEEE Transactions on Electron Devices;2024-09

2. Optimizing the Ferroelectric Performance of Hf_0.5Zr_0.5O₂ Epitaxial Film by La_0.67Sr_0.33MnO₃ Capping Layer;Advanced Electronic Materials;2024-08-05

3. Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer;AIP Advances;2024-08-01

4. First‐Principles Calculation of Basic Properties of Rhombohedral Hafnium Oxide with Space Group R3;physica status solidi (b);2024-06-08

5. Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor;AIP Advances;2024-06-01