Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors-Reference-Cited by-同舟云学术

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Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

Published:2021-02-08 Issue:6 Volume:118 Page:062904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Francois T.¹²^ORCID,Grenouillet L.¹,Coignus J.¹^ORCID,Vaxelaire N.¹,Carabasse C.¹,Aussenac F.¹,Chevalliez S.¹,Slesazeck S.³^ORCID,Richter C.³^ORCID,Chiquet P.²^ORCID,Bocquet M.²,Schroeder U.³^ORCID,Mikolajick T.³⁴^ORCID,Gaillard F.¹,Nowak E.¹

Affiliation:

1. University Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

2. Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, F-13453 Marseille, France

3. NaMLab gGmbH, Noethnitzer Str. 64a, Dresden, 01187, Germany

4. IHM, TU Dresden, 01062 Dresden, Germany

Funder

H2020 Industrial Leadership

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035650

Reference29 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Review and perspective on ferroelectric HfO2-based thin films for memory applications

3. Demonstration of High Ferroelectricity (P$_{{r}}$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films

4. On the Origin of the Large Remanent Polarization in La:HfO 2

5. Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

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1. A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing;Advanced Electronic Materials;2024-08-05

2. CMOS-compatible Hf_0.5Zr_0.5O₂-based ferroelectric memory crosspoints fabricated with damascene process;Nanotechnology;2024-07-29

3. Improvement in the polarization properties in thin ferroelectric Hf_0.5Zr_0.5O₂ films by two-step flash lamp annealing;Japanese Journal of Applied Physics;2024-02-01

4. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry;The Journal of Physical Chemistry Letters;2024-01-22

5. Size-Scaling Effect on Domain Switching Time and Coercive Field of TiN/Hf_0.5Zr_0.5O₂/TiN Thin-Film Capacitors;IEEE Transactions on Electron Devices;2023-12

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