Demonstration of High Ferroelectricity (P$_{{r}}$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1

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Demonstration of High Ferroelectricity (P$_{{r}}$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films

Published:2020-01 Issue:1 Volume:41 Page:34-37
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Das Dipjyoti^ORCID,Gaddam Venkateswarlu,Jeon Sanghun^ORCID

Funder

Samsung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8944313/08910585.pdf?arnumber=8910585

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