Silicon Atomic-Layer Doped Hf₀.₇Zr₀.₃O₂ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>10¹² Cycles)-Reference-Cited by-同舟云学术

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Silicon Atomic-Layer Doped Hf₀.₇Zr₀.₃O₂ Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>10¹² Cycles)

Published:2024-07 Issue:7 Volume:71 Page:4403-4406
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tai Lu¹^ORCID,Wei Wei²,Sang Pengpeng¹^ORCID,Li Xiaopeng¹^ORCID,Dou Xiaoyu¹,Zhao Guoqing¹,Jiang Pengfei²^ORCID,Luo Qing²^ORCID,Zhan Xuepeng¹^ORCID,Wu Jixuan¹^ORCID,Chen Jiezhi¹^ORCID

Affiliation:

1. School of Information Science and Engineering (ISE), Shandong University, Qingdao, China

2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

China Key Research and Development Program

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10566499/10538234.pdf?arnumber=10538234

Reference21 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption

3. Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf_0.5Zr_0.5O₂ Films

4. Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer

5. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

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