Die attachment Process Overview for High Power Semiconductors
Author:
Affiliation:
1. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Warsaw,Poland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10168303/10168312/10168484.pdf?arnumber=10168484
Reference27 articles.
1. Ag-based Thermal Interface Materials for GaN-on-Si Assembly Chips in Power Applications
2. Thermal and mechanical properties of sintered Ag layers for power module assembly
3. Pressureless and low temperature direct bonding on Si, SiC and GaN via Ag paste sinter-joining
4. Comparing the mechanical and thermal-electrical properties of sintered copper (Cu) and sintered silver (Ag) joints
5. Sintering mechanism of micron/submicron-size Ag particles;yeom;Proc Of ICEP-IAAC,2018
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