Thermoelectrical Parameters of SiC PiN Diodes with New Die Attachment Ag Paste-Reference-Cited by-同舟云学术

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Thermoelectrical Parameters of SiC PiN Diodes with New Die Attachment Ag Paste

Published:2023-10-18 Issue: Volume: Page:167-172
ISSN:
Container-title:2023 IEEE 29th International Symposium for Design and Technology in Electronic Packaging (SIITME)
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Author:

Sandulescu Corina Mitulescu¹,Kisiel Riszard²,Mysliwiec Marcin³,Svasta Paul⁴,Draghici Florin⁵,Mihailescu Bogdan⁴

Affiliation:

1. CETTI National University of Science and Technology Politechnica Bucharest,Bucharest,Romania

2. Institute of Microelectronics and Optoelectronics Warsaw University of Technology,Warsaw,Poland

3. CEZAMAT Warsaw University of Technology,Warsaw,Poland

4. CETTI National University of Science and Technology Polytechnica Bucharest,Bucharest,Romania

5. UNSTPB National University of Science and Technology Polytechnica Bucharest,Bucharest,Romania

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10430414/10430490/10430946.pdf?arnumber=10430946

Reference10 articles.

1. Die attachment Process Overview for High Power Semiconductors

2. Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

3. Fundamentals of Power Semiconductor Devices

4. Applying Sintering and SLID Bonding for Assembly of GaN Chips Working at High Temperatures

5. Solid-Liquid InterDiffusion (SLID) Bonding, for Thermally Challenging Applications

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