Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron
Author:
Affiliation:
1. Physical-Technical Institute, Scientific Association “Physics-Sun”, Uzbek Academy of Sciences, Bodomzor yo’li 2B, Tashkent 100084, Uzbekistan
Abstract
Publisher
Hindawi Limited
Subject
General Engineering,General Materials Science
Link
http://downloads.hindawi.com/journals/amse/2018/8797031.pdf
Reference48 articles.
1. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum
2. Design considerations and experimental analysis for silicon carbide power rectifiers
3. Radiation resistance of transistor-and diode-type SiC detectors irradiated with 8-MeV protons
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