Author:
Das Arnima,Kundu Abhijit,Santra Arpita,Kanjilal Maitreyi R.,Mukherjee Moumita
Reference10 articles.
1. Atabaev IG, Juraev KN (2018) Research of pin based on 4H-SiC fabricated by low-temperature diffusion of boron. Adv Mater Sci Eng 2018:1–10. https://doi.org/10.1155/2018/8797031
2. Chen WK (1993) Electronic Archive: new semiconductor materials, characteristics and properties (Online). In: Linear networks and systems (Book style). Wadsworth, Belmont, CA, pp 123–135. https://www.ioffe.ru/SVA/NSM/Semicond/Si/SiC. Accessed Feb 2018
3. John Bosco Balaguru R, Jeyaprakash BG, School of Electrical & Electronics Engineering SASTRA University, Quantum Wells, Quantum Wires, Quantum Dots, Quantum Limit of Conductance, Quantum Capacitance & Quantum HALL Effect, NPTEL—Electrical & Electronics Engineering—Semiconductor Nanodevices, Joint Initiative of IITs and IISc—Funded by MHRD
4. Khan IA, Copper JA (2000) Measurement of high-field electron transport in silicon carbide. IEEE Trans Electron Devices 47:269–273. https://doi.org/10.1063/1.4807162
5. Kundu A, Adhikari S, Das A, Kanjilal MR, Mukherjee M (2021) Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain. Microsyst Technol. https://doi.org/10.1007/s00542-018-4119-4