A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC-Reference-Cited by-同舟云学术

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Published:2013-05-21 Issue:19 Volume:113 Page:193708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Winters M.,Hassan J.,Zirath H.,Janzén E.,Rorsman N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4807162

Reference30 articles.

1. Velocity saturation in intrinsic graphene

2. Electron transport and full-band electron-phonon interactions in graphene

3. Transport in graphene on BN and SiC

4. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

5. Measurement of high-field electron transport in silicon carbide

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