Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature-Reference-Cited by-同舟云学术

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Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

Published:1975-11 Issue:11 Volume:22 Page:1045-1047
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Canali C.,Majni G.,Minder R.,Ottaviani G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31743/01478102.pdf?arnumber=1478102

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