Numerical and experimental investigation of temperature dependence vs. mobility degradation on I–V characteristics in N-LDMOS structure-Reference-Cited by-同舟云学术

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Numerical and experimental investigation of temperature dependence vs. mobility degradation on I–V characteristics in N-LDMOS structure

Published:2024-07 Issue: Volume:59 Page:104515
ISSN:2214-157X
Container-title:Case Studies in Thermal Engineering
language:en
Short-container-title:Case Studies in Thermal Engineering

Author:

Almatrafi Mohammed,Belaïd Mohamed Ali^ORCID

Publisher

Elsevier BV

Reference29 articles.

1. Les semiconducteurs de puissance de la physique du solide aux applications;Aloïsi;Ellipses édition marketing S.A.,2001

2. RF performance reliability of power N-LDMOS under pulsed-RF aging life test in radar application S-band, IET Circuits;Belaïd;Devices & Systems,2020

3. High-performance temperature control system for resistance furnace annealing and crystal growth of semiconductor compounds;Surus;Results in Engineering,2022

4. Aging in CMOS RF linear power amplifiers: an experimental study;Aragones;IEEE Trans. Microw. Theor. Tech.,2021

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1. Advancing efficiency: comprehensive strategies for minimizing optical and electrical losses in group III-V compound tandem solar cells for future photovoltaic technology;Engineering Research Express;2024-07-11

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