Using double Hall sensor structure to greatly reduce voltage offset in epitaxial graphene-Reference-Cited by-同舟云学术

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Using double Hall sensor structure to greatly reduce voltage offset in epitaxial graphene

Published:2019-03-14 Issue:10 Volume:125 Page:104502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

El-Ahmar S.¹^ORCID,Koczorowski W.¹²,Oszwaldowski M.³^ORCID

Affiliation:

1. Institute of Physics, Poznan University of Technology, Piotrowo 3, 60-965 Poznan, Poland

2. Center for Advanced Technology, Adam Mickiewicz University, Umultowska 89C, 61-614 Poznan, Poland

3. Poznan University of Technology, Piotrowo 3, 60-965 Poznan, Poland

Funder

Polish Ministry of Science and Higher Education

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5050376

Reference15 articles.

1. The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide

2. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

3. Statistics of epitaxial graphene for Hall effect sensors

4. Double Hall sensor structure reducing voltage offset

5. Temperature dependence of reduced offset in double Hall sensor structure reducing voltage offset

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1. Adsorption of ethylene oxide on doped monolayers of MoS2: A DFT study;Materials Science and Engineering: B;2021-03

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