Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC-Reference-Cited by-同舟云学术

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

Published:2014-09-28 Issue:12 Volume:116 Page:123708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ciuk Tymoteusz¹²,Cakmakyapan Semih³,Ozbay Ekmel³,Caban Piotr¹,Grodecki Kacper¹,Krajewska Aleksandra¹⁴,Pasternak Iwona¹,Szmidt Jan²,Strupinski Wlodek¹

Affiliation:

1. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland

2. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

3. Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara, Turkey

4. Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw, Poland

Funder

European Union Seventh Framework Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896581

Reference72 articles.

1. Graphene: Electronic and Photonic Properties and Devices

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4. The rise of graphene

5. Electric Field Effect in Atomically Thin Carbon Films

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