Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion-Reference-Cited by-同舟云学术

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Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

Published:2020-07 Issue:4 Volume:93 Page:1036-1041
ISSN:1062-0125
Container-title:Journal of Engineering Physics and Thermophysics
language:en
Short-container-title:J Eng Phys Thermophy

Author:

Zhuraev Kh. N.,Yusupov A.,Gulyamov A. G.,Khazhiev M. U.,Saidov D. Sh.,Adilov N. B.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,Condensed Matter Physics

Link

https://link.springer.com/content/pdf/10.1007/s10891-020-02205-5.pdf

Reference27 articles.

1. N. B. Strokan, A. M. Ivanov, and A. A. Lebedev, SiC Power Materials, Springer, Berlin (2004).

2. B. Zat’ko, A. Šagátová, K. Sedlačková, P. Boháček, M. Sekáčová, Z. Kohout, C. Granja, and V. Nečas, Radiation detector based on 4H-SiC used for thermal neutron detection, J. Instrum., 11, 11022 (2016).

3. A. V. Afanasyev, V. A. Ilyin, V. V. Luchinin, S. A. Reshanov, A. Schöner, K. A. Sergushichev, and A. A. Smirnov, Effect of neutron irradiation on epitaxial 4H-SiC PiN UV-photodiodes, Mater. Sci. Forum, 897, 614–617 (2017).

4. S. R. Smith, A. O. Evwaraye, W. C. Mitchel, and M. A. Capano, Shallow acceptor levels in 4H- and 6H-SiC, J. Electr. Mater., 28, 190–195 (1999).

5. C. C. Tin, S. Mendis, K. Chew, I. Atabaev, T. Saliev, E. Bakhranov, B. Atabaev, V. Adedeji, and Rusli, Oxide film assisted dopant diffusion in silicon carbide, Thin Solid Films, 518, 118–120 (2010).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

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