Ring Oscillator Aging Characterization in Conventional CMOS Technologies
Author:
Affiliation:
1. Intel NDTM LLC,CA, 95054,Santa Clara,USA
2. Intel NDTM LLC,CA 95630,Folsom,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10302454/10302463/10302522.pdf?arnumber=10302522
Reference11 articles.
1. Determination of DC equivalent hot carrier stress times in scaled CMOS devices using novel AC stress methodology
2. Bias temperature instability in scaled CMOS technologies: A circuit perspective
3. Self-heating and its implications on hot carrier reliability evaluations
4. Assessing device reliability margin in scaled CMOS technologies using ring oscillator circuits
5. CMOS device design-in reliability approach in advanced nodes
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1. An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage;Micromachines;2024-06-08
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