Determination of DC equivalent hot carrier stress times in scaled CMOS devices using novel AC stress methodology-Reference-Cited by-同舟云学术

Determination of DC equivalent hot carrier stress times in scaled CMOS devices using novel AC stress methodology

Published:2019-02 Issue: Volume:93 Page:98-101
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Kerber Andreas^ORCID,Nigam Tanya

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET's;Heremans;IEEE Trans. Electron Devices,1988

2. Design in hot-carrier reliability for higher performance logic applications;Fang,1998

3. Universality of NBTI – From Devices to Circuits and Products;Mahapatra,2014

4. Accurate Product Lifetime Predictions Based on Device-level Measurements;Nigam,2009

5. Assessing Device Reliability Margin in Scaled CMOS Technologies Using Ring Oscillator Circuits;Kerber,2017

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3. Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed V_G/V_D Stress;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

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5. Reliability Characterization of Ring Oscillator Circuits for Advanced CMOS Technologies;IEEE Transactions on Device and Materials Reliability;2020-06