Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures-Reference-Cited by-同舟云学术

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Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

de Souza Michelly¹,Cerdeira Antonio²,Estrada Magali²,Barraud Sylvain³,Casse Mikael³,Vinet Maud³,Faynot Olivier³,Pavanello Marcelo A.¹

Affiliation:

1. Centro Universitário FEI,Electrical Engineering Department,São Bernardo do Campo,Brazil

2. CINVESTAV-IPN,Section of Solid-State Electronics,Department of Electrical Engineering,México D.F.

3. Université Grenoble Alpes, CEA, LETI,F-38000 Grenoble,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9908144/9907765/09908212.pdf?arnumber=9908212

Reference10 articles.

1. GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications

2. Short-channel performance and mobility analysis of <110>- and <100>-oriented tri-gate nanowire MOSFETs with raised source/drain extensions

3. Silicon-on-Insulator Technology: Materials to VLSI

4. Compact Modeling of Temperature-Dependent Gate-Induced Drain Leakage Including Low-Field Effects

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures;Solid-State Electronics;2024-04

2. Analytical model for the drain and gate currents in silicon nanowire and nanosheet MOS transistors valid between 300 and 500 K;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-02-23

3. Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures;Solid-State Electronics;2023-10

4. High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model;IEEE Transactions on Electron Devices;2023-09

5. High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs;IEEE Journal of the Electron Devices Society;2023

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