Short-channel performance and mobility analysis of <110>- and <100>-oriented tri-gate nanowire MOSFETs with raised source/drain extensions-Reference-Cited by-同舟云学术

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Short-channel performance and mobility analysis of <110>- and <100>-oriented tri-gate nanowire MOSFETs with raised source/drain extensions

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:2010 Symposium on VLSI Technology
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Author:

Saitoh M.,Nakabayashi Y.,Itokawa H.,Murano M.,Mizushima I.,Uchida K.,Numata T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5548927/5556114/05556214.pdf?arnumber=5556214

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures;Solid-State Electronics;2024-04

2. A Comprehensive Comparison of Different Wafer/Channel Orientations for Ultrascaled Nanosheet FETs;IEEE Transactions on Electron Devices;2024-03

3. Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures;Solid-State Electronics;2023-10

4. High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs;IEEE Journal of the Electron Devices Society;2023

5. Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

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