Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Nanowire transistors: Physics of devices and materials in one dimension;Colinge,2016
2. Bae G, et al. 3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High-Performance Applications, 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2018, pp. 28.7.1–28.7.4. https://doi.org/10.1109/IEDM.2018.8614629.
3. Shih Y-C, et al. A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process, 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2020, pp. 11.4.1–11.4.4. https://doi.org/10.1109/IEDM13553.2020.9372115.
4. Hu VP-H, et al. High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing, 2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 8.6.1–8.6.4. https://doi.org/10.1109/IEDM19574.2021.9720511.
5. Barraud S, et al. Strained Silicon Directly on Insulator N- and P-FET nanowire transistors, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm, Sweden, 2014, pp. 65–68. https://doi.org/10.1109/ULIS.2014.6813907.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures;Solid-State Electronics;2024-04
2. Analytical model for the drain and gate currents in silicon nanowire and nanosheet MOS transistors valid between 300 and 500 K;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-02-23
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