Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC Substrate-Reference-Cited by-同舟云学术

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Study on Uniformity of Epitaxial Graphene on 6-inch 4H-SiC Substrate

Published:2023-02-07 Issue: Volume: Page:
ISSN:
Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Shao Chen¹,Li Xiaomeng¹,Zhong Guanglei¹,Chen Xiufang¹,Xu Xiangang¹,Hu Xiaobo¹,Yu Wancheng¹,Yang Xianglong¹,Xie Xuejian¹,Chen Huiqing¹

Affiliation:

1. Shandong University,Institute of Novel Semiconductors

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071008.pdf?arnumber=10071008

Reference14 articles.

1. Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena

2. High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching

3. Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2

4. On-axis homoepitaxial growth on Si-face 4H–SiC substrates

5. Graphene formation on step-free 4H-SiC(0001)

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